A high-resistance KTP crystal with high radiation resistance, low absorption and low values of control voltages for controlling and modulating laser radiation in the spectrum range of 1-3 microns. Today it is one of the most effective materials in this field.
Control of laser radiation in special-purpose laser systems, environmental monitoring, medical equipment.
Characteristic | Value |
---|---|
Chemical composition | KTiOPO4 |
Absorption at λ=1.064 microns | 0.001 sm-1 |
DC resistance | 7·1010 Ohm-1 · sm-1 |
Specific half-wave voltage | < 8000 V |
Optical contrast | up to 100 |
Dimensions | 6 × 6 × 10 mm3 |